Method of making an encapsulated sensitive device
    2.
    发明申请
    Method of making an encapsulated sensitive device 有权
    制作封装敏感器件的方法

    公开(公告)号:US20060216951A1

    公开(公告)日:2006-09-28

    申请号:US11439474

    申请日:2006-05-23

    IPC分类号: H01L21/31

    摘要: A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.

    摘要翻译: 一种制造封装等离子体敏感装置的方法。 该方法包括:提供与衬底相邻的等离子体敏感器件; 使用选自非等离子体工艺或改进的溅射工艺的工艺在等离子体敏感器件上沉积等离子体保护层; 以及沉积与所述等离子体保护层相邻的至少一个势垒堆叠,所述至少一个势垒堆叠包括至少一个去耦层和至少一个势垒层,所述等离子体敏感器件封装在所述衬底和所述至少一个阻挡层之间, 其中使用等离子体工艺沉积去耦层,阻挡层或两者,所述封装等离子体敏感器件与不具有等离子体保护层的封装的等离子体感应器件相比,具有由等离子体引起的损伤量减少。 还描述了封装的等离子体敏感器件。