公开(公告)号：US6060397A

公开(公告)日：2000-05-09

申请号：US502688

申请日：1995-07-14

申请人： Martin Seamons ,  Cary Ching ,  Kou Imaoka ,  Tatsuya Sato ,  Tirunelveli S. Ravi ,  Michael C. Triplett

发明人： Martin Seamons ,  Cary Ching ,  Kou Imaoka ,  Tatsuya Sato ,  Tirunelveli S. Ravi ,  Michael C. Triplett

IPC分类号： C23C16/44 ,  C23C16/56 ,  H01L21/203 ,  H01L21/205 ,  H01L21/304 ,  H01L21/31 ,  H01L21/00

CPC分类号： C23C16/4405 ,  Y10S438/905

摘要： A method (100) of cleaning residues from a chemical vapor deposition apparatus (10) is provided. The present method (100) includes introducing into a chamber (12) cleaning gases such as N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from the cleaning gases. The present method also includes removing residues from interior surfaces of the chamber 12 by forming a volatile product from the residues and at least one of the cleaning gases.

摘要翻译： 提供了从化学气相沉积装置（10）清洗残留物的方法（100）。 本方法（100）包括将清洁气体如N 2，C 2 F 6和O 2的腔室（12）引入并从清洗气体形成等离子体。 本方法还包括通过从残余物和至少一种清洁气体形成挥发性产物来从室12的内表面去除残留物。