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公开(公告)号：US20110102551A1
公开(公告)日：2011-05-05
申请号：US13001627
申请日：2009-07-28
CPC分类号： G06T3/40 , G06T15/04 , G06T15/50 , G06T2210/36
摘要： Provided is an image generation device generating a high-quality image of an object under a pseudo light source at any desired position, based on geometric parameters generated from a low-quality image of the object. The image generation device includes: a geometric parameter calculation unit (102) that calculates a first geometric parameter regarding a shape of a surface from light source position, viewpoint position, and geometric normal information regarding the shape; a high-resolution database unit (103) that stores an exemplum indicating a mesostructure of a portion of the surface and has a spatial resolution higher than the geometric normal information; an exemplum expansion unit (104) that increases the exempla to be spatially expanded; a geometric parameter modification unit (105) that modifies the first geometric parameter using the increased exempla; and an image generation unit (106) that generates an output image by applying the modified geometric parameter to a reflection model.
摘要翻译： 提供了一种图像生成装置，其基于从对象的低质量图像生成的几何参数，在任何期望位置处在伪光源下生成对象的高质量图像。 该图像生成装置具备：几何参数计算部（102），其从光源位置，视点位置以及关于形状的几何法线信息计算关于表面形状的第一几何参数; 高分辨率数据库单元（103），其存储指示所述表面的一部分的介观结构并且具有高于所述几何法线信息的空间分辨率的示例; 示例性扩展单元（104），其增加要在空间上扩展的示例; 使用增加的示例来修改第一几何参数的几何参数修改单元（105）; 以及通过将修改后的几何参数应用于反射模型来生成输出图像的图像生成部（106）。
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公开(公告)号：US20110102641A1
公开(公告)日：2011-05-05
申请号：US13000743
申请日：2008-07-30
申请人： Masahiro Iwasaki , Lorcan Mac Manus , Neil Dodgson
发明人： Masahiro Iwasaki , Lorcan Mac Manus , Neil Dodgson
CPC分类号： G06T3/40 , G06T15/04 , G06T15/50 , G06T2210/36
摘要： Provided is an image generation device generating a high-quality image of an object under a pseudo light source at any desired position, based on geometric parameters generated from a low-quality image of the object. The image generation device includes: a geometric parameter calculation unit (102) that calculates a first geometric parameter regarding a surface structure from light source position, viewpoint position, and geometric normal information regarding the surface structure; a high-resolution database unit (103) that stores an exemplum indicating a mesostructure of a portion of the surface and has a spatial resolution higher than the geometric normal information; an exemplum expansion unit (104) that increases the exempla to be spatially expanded; a geometric parameter modification unit (105) that modifies the first geometric parameter using the increased exempla; and an image generation unit (106) that generates an output image by applying the modified geometric parameter to a reflection model.
摘要翻译： 提供了一种图像生成装置，其基于从对象的低质量图像生成的几何参数，在任何期望位置处在伪光源下生成对象的高质量图像。 图像生成装置具备：从光源位置，视点位置以及关于表面结构的几何法线信息计算关于表面结构的第一几何参数的几何参数计算部（102） 高分辨率数据库单元（103），其存储指示所述表面的一部分的介观结构并且具有高于所述几何法线信息的空间分辨率的示例; 示例性扩展单元（104），其增加要在空间上扩展的示例; 使用增加的示例来修改第一几何参数的几何参数修改单元（105）; 以及通过将修改后的几何参数应用于反射模型来生成输出图像的图像生成部（106）。
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公开(公告)号：US06554469B1
公开(公告)日：2003-04-29
申请号：US09837816
申请日：2001-04-17
申请人： David Thomson , John Blake , Lorcan Mac Manus
发明人： David Thomson , John Blake , Lorcan Mac Manus
IPC分类号： H01L3500
CPC分类号： G01K7/01
摘要： A four current transistor temperature sensor comprises a p-n junction, preferably the base-emitter junction of a bipolar transistor, which is driven with four different currents in a predetermined sequence. Each of the four currents induces a respective base-emitter voltage, which is measured. The temperature of the transistor is calculated based on the values of the four driving currents and the four measured base-emitter voltages. The four driving currents (I1, I2, I3 and I4) are preferably arranged such that I1=2*I3, I2=2*I4, I1/I2=A and I3/I4=A, where A is a predetermined current ratio. I1 and I2 produce respective base-emitter voltages which are subtracted from each other to produce &Dgr;Vbe1, and I3 and I4 produce respective base-emitter voltages which are subtracted from each other to produce &Dgr;Vbe2. When so arranged, the difference between &Dgr;Vbe1 and &Dgr;Vbe2 is entirely due to the effect of series base and emitter resistances rb and re. Therefore, the &Dgr;Vbe1−&Dgr;Vbe2 value provides a correction factor which enables temperature measurement errors due to rb and re to be eliminated.
摘要翻译： 四电流晶体管温度传感器包括p-n结，优选地是以预定顺序用四个不同电流驱动的双极晶体管的基极 - 发射极结。 四个电流中的每一个引起相应的基极 - 发射极电压，其被测量。 基于四个驱动电流和四个测量的基极 - 发射极电压的值来计算晶体管的温度。 四个驱动电流（I1，I2，I3和I4）优选地被布置成使得I1 = 2 * I3，I2 = 2 * I4，I1 / I2 = A和I3 / I4 = A，其中A是预定电流比。 I1和I2产生彼此相减以产生DELTAVbe1的相应的基极 - 发射极电压，I3和I4产生彼此相减以产生DELTAVbe2的相应的基极 - 发射极电压。 当这样布置时，DELTAVbe1和DELTAVbe2之间的差异完全是由于串联基极和发射极电阻rb和re的影响。 因此，DELTAVbe1-DELTAVbe2值提供了一个校正因子，可以使rb和re被消除的温度测量误差。
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