公开(公告)号：US20110018092A1

公开(公告)日：2011-01-27

申请号：US12840872

申请日：2010-07-21

申请人： Masashi Oshima ,  Masaya Ohtsuka ,  Ryuta Isobe

发明人： Masashi Oshima ,  Masaya Ohtsuka ,  Ryuta Isobe

IPC分类号： H01L23/525

CPC分类号： H01L23/5256 ,  H01L23/5258 ,  H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.

摘要翻译： 半导体器件包括半导体衬底，基底绝缘层，硅熔丝，一对硅线，硅保护环，绝缘涂层，第一层间绝缘层，通孔保护环，金属保护环，最终 绝缘层和保险丝窗。 基极绝缘层设置在半导体衬底上。 硅保险丝设置在基底绝缘层上。 一对硅线设置在基底绝缘层上。 硅保护环设置在基底绝缘层上。 绝缘涂层至少沉积在硅线的表面上。 第一层间绝缘层设置在基底绝缘层上。 最后的绝缘层设置在层间绝缘层上。 保险丝窗口位于保护环内的硅保险丝上方。

公开(公告)号：US08426942B2

公开(公告)日：2013-04-23

申请号：US12840872

申请日：2010-07-21

申请人： Masashi Oshima ,  Masaya Ohtsuka ,  Ryuta Isobe

发明人： Masashi Oshima ,  Masaya Ohtsuka ,  Ryuta Isobe

IPC分类号： H01L23/52

CPC分类号： H01L23/5256 ,  H01L23/5258 ,  H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.

摘要翻译： 半导体器件包括半导体衬底，基底绝缘层，硅熔丝，一对硅线，硅保护环，绝缘涂层，第一层间绝缘层，通孔保护环，金属保护环，最终 绝缘层和保险丝窗。 基极绝缘层设置在半导体衬底上。 硅保险丝设置在基底绝缘层上。 一对硅线设置在基底绝缘层上。 硅保护环设置在基底绝缘层上。 绝缘涂层至少沉积在硅线的表面上。 第一层间绝缘层设置在基底绝缘层上。 最后的绝缘层设置在层间绝缘层上。 保险丝窗口位于保护环内的硅保险丝上方。