公开(公告)号：US20020132444A1

公开(公告)日：2002-09-19

申请号：US10150326

申请日：2002-05-20

申请人： Matsushita Electronics Corporation

发明人： Manabu Yanagihara ,  Tsuyoshi Tanaka ,  Akihisa Sugimura

IPC分类号： H01L021/76

CPC分类号： H03F1/302 ,  G05F3/205

摘要： The invention provides a bias circuit for suppressing change with temperature of an idle current of a power transistor and a semiconductor device including the bias circuit. The bias circuit includes a first bipolar transistor having an emitter, a base and a collector, and at least one Schottky diode connected to the base of the first bipolar transistor, and the at least one Schottky diode is provided for supplying a base potential for suppressing a collector current of the first bipolar transistor from changing in accordance with temperature change.

摘要翻译： 本发明提供一种用于抑制功率晶体管的空载电流随温度变化的偏置电路和包括该偏置电路的半导体器件。 偏置电路包括具有发射极，基极和集电极的第一双极晶体管和连接到第一双极晶体管的基极的至少一个肖特基二极管，并且提供至少一个肖特基二极管以提供用于抑制的基极电位 第一双极晶体管的集电极电流根据温度变化而变化。