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1.发明授权Method for automatic determination of substrates states in plasma processing chambers 失效自动测定等离子体处理室中基片状态的方法公开(公告)号：US07393459B2
公开(公告)日：2008-07-01
申请号：US10939158
申请日：2004-09-10
申请人： Matthew F Davis , Lei Lian , Quentin E. Walker
发明人： Matthew F Davis , Lei Lian , Quentin E. Walker
CPC分类号： H01J37/32972 , G01B11/24 , G01N21/45 , G01N21/55 , G01N21/8422 , G01N2021/8416 , G01N2201/1222 , G01N2201/129 , H01J37/32935
摘要： A method for automatic determination of a state of a substrate in a plasma processing chamber is provided. Substrate reflectance data is collected in a processing chamber prior to processing to be analyzed with reference reflectance data to determine if the substrate state meets a control criterion. The substrate state may define the thickness and the qualities of the films on the substrate, the critical dimensions of the different layers on the substrate. The reflectance data is analyzed using a multi-variant analysis technique, such as principle component analysis. In addition to analyzing substrate state prior to processing, substrate reflectance could also be collected in a processing chamber during processing to be analyzed with reference reflectance data to further determine if the substrate state and/or the substrate processing are meeting a control criterion.
摘要翻译： 提供了一种用于自动确定等离子体处理室中的基板的状态的方法。 在处理之前将基板反射率数据收集在处理室中，以用参考反射率数据进行分析，以确定基板状态是否满足控制标准。 衬底状态可以限定衬底上的膜的厚度和质量，衬底上不同层的临界尺寸。 使用多变量分析技术（如主成分分析）分析反射率数据。 除了在处理之前分析衬底状态之外，衬底反射率也可以在处理期间被收集在处理室中，以用参考反射率数据进行分析，以进一步确定衬底状态和/或衬底处理是否满足控制标准。
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公开(公告)号：US20100071438A1
公开(公告)日：2010-03-25
申请号：US12233805
申请日：2008-09-19
CPC分类号： G01F1/667 , G01F25/0007
摘要： A method for determining the flow rate of a gas includes measuring a first concentration of a calibration gas provided to the process chamber at a first pressure and temperature by directing infrared radiation into the process chamber and monitoring a first amount of infrared radiation absorbed by the calibration gas. A mixture of a second gas and the calibration gas is provided to the process chamber while maintaining the first pressure and temperature. A second concentration of the calibration gas in the mixture is measured by directing infrared radiation into the process chamber and monitoring a second amount of infrared radiation absorbed by the calibration gas. A flow rate of the second gas is calculated by comparing the first and second concentrations of the calibration gas. In one embodiment, the calibration gas and the second gas may not absorb the infrared radiation at the same wavelength.
摘要翻译： 用于确定气体流速的方法包括通过将红外辐射引入处理室来测量在第一压力和温度下提供给处理室的校准气体的第一浓度，并监测由校准吸收的第一量的红外辐射 加油站。 在保持第一压力和温度的同时，向处理室提供第二气体和校准气体的混合物。 混合物中校准气体的第二浓度通过将红外辐射引入处理室并监测由校准气体吸收的第二量的红外辐射来测量。 通过比较校准气体的第一和第二浓度来计算第二气体的流量。 在一个实施例中，校准气体和第二气体可能不吸收相同波长的红外辐射。
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公开(公告)号：US08089046B2
公开(公告)日：2012-01-03
申请号：US12233805
申请日：2008-09-19
CPC分类号： G01F1/667 , G01F25/0007
摘要： A method for determining the flow rate of a gas includes measuring a first concentration of a calibration gas provided to the process chamber at a first pressure and temperature by directing infrared radiation into the process chamber and monitoring a first amount of infrared radiation absorbed by the calibration gas. A mixture of a second gas and the calibration gas is provided to the process chamber while maintaining the first pressure and temperature. A second concentration of the calibration gas in the mixture is measured by directing infrared radiation into the process chamber and monitoring a second amount of infrared radiation absorbed by the calibration gas. A flow rate of the second gas is calculated by comparing the first and second concentrations of the calibration gas. In one embodiment, the calibration gas and the second gas may not absorb the infrared radiation at the same wavelength.
摘要翻译： 用于确定气体流速的方法包括通过将红外辐射引入处理室来测量在第一压力和温度下提供给处理室的校准气体的第一浓度，并监测由校准吸收的第一量的红外辐射 加油站。 在保持第一压力和温度的同时，向处理室提供第二气体和校准气体的混合物。 混合物中校准气体的第二浓度通过将红外辐射引入处理室并监测由校准气体吸收的第二量的红外辐射来测量。 通过比较校准气体的第一和第二浓度来计算第二气体的流量。 在一个实施例中，校准气体和第二气体可能不吸收相同波长的红外辐射。
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