摘要:
A method for the preparation of a compound of formula (I) or a pharmaceutically acceptable salt or solvate thereof; from a compound of the formula: (IV); wherein L represents a leaving group.
摘要:
A method for the preparation of a compound of formula (1) or a pharmaceutically acceptable salt or solvate thereof; from a compound of the formula: (IV); wherein L represents a leaving group.
摘要:
A method for the preparation of a compound of formula (1) or a pharmaceutically acceptable salt or solvate thereof; from a compound of the formula: (IV); wherein L represents a leaving group.
摘要:
A method for the preparation of a compound of formula (I) or a pharmaceutically acceptable salt or solvate thereof; from a compound of the formula: (IV); wherein L represents a leaving group.
摘要:
A process for creating a melded visual image to accompany a delivery of digital content. The melded image including at least a digital image associated with the digital content and a first placement image. The first placement image selected for delivery with the digital image in accordance with the execution of one or more rules concerning the digital content or the end user receiving the digital content. The melded image may contain constituent parts that have been altered such as changing the aspect ratio or transparency so that the digital image and the placement image can be displayed on a display screen associated with at least one class of player device that may play the digital content. The placement image may be part of an advertising campaign.
摘要:
A method to correct critical dimension errors during a semiconductor manufacturing process. The method includes providing a first semiconductor device. The first semiconductor device is analyzed to determine at least one critical dimension error within the first semiconductor device. A dose of electron beam exposure to correct the at least one critical dimension error during a subsequent process to form a second semiconductor device, or during modification of the first semiconductor device is determined. The subsequent process comprises providing a semiconductor structure. The semiconductor structure comprises a photoresist layer on a semiconductor substrate. A plurality of features are formed in the photoresist layer. At least one feature of the plurality of features comprises the at least one critical dimension error. The at least one feature comprising the critical dimension error is corrected by exposing the at least one feature to an electron beam comprising the dose of electron beam exposure, resulting in reduction of the size, or shrinkage, of the at least one feature comprising a critical dimension error.
摘要:
In accordance with a nonlimiting example, a network device transfers communications data along a communications channel within an Internet Protocol (IP) network. A communications module includes a signal input connected to the communications channel of the IP network and receives an Ethernet packet having an Ethernet header and IP data. A processor is coupled to the communications module and processes the Ethernet packet. It removes the Ethernet header and adds Virtual Local Area Network (VLAN) tagging information to a padding section in the packet. In one aspect, the processor includes an encryption module that encrypts the VLAN tagging information along with the IP data. The network device includes a signal output through which the packet is transferred to a destination within the IP network over the communications channel as an IPSec tunnel.
摘要:
In accordance with a nonlimiting example, a network device transfers communications data along a communications channel within an Internet Protocol (IP) network. A communications module includes a signal input connected to the communications channel of the IP network and receives an Ethernet packet having an Ethernet header and IP data. A processor is coupled to the communications module and processes the Ethernet packet. It removes the Ethernet header and adds Virtual Local Area Network (VLAN) tagging information to a padding section in the packet. In one aspect, the processor includes an encryption module that encrypts the VLAN tagging information along with the IP data. The network device includes a signal output through which the packet is transferred to a destination within the IP network over the communications channel as an IPSec tunnel.
摘要:
A monolithic optical pellicle and method of making used to protect a photomask during photolithography processing. The monolithic optical pellicle is comprised of a pellicle plate having a recessed central portion integrally formed with a perimeter frame of the pellicle plate such that it is a one-piece optical pellicle. The monolithic optical pellicle comprises a material of sufficient rigidity to minimize distortions in and maximize durability of the pellicle when used in combination with the recessed portion having a thickness that prevents sagging thereof due to applied forces on the resultant monolithic optical pellicle. This recessed central portion is the optical pellicle portion of the present monolithic optical pellicle, while the integral perimeter frame is used to attach the monolithic optical pellicle at the desired stand-off distance to a photomask. The monolithic optical pellicle preferably comprises a material that is transparent to an exposure field at about 157 nm wavelengths.
摘要:
A method of making an embedded attenuated phase shift mask (EAPSM) comprises initially providing a phase shift mask substrate having a layer of phase shifting material and a layer of an opaque material, and depositing a first resist layer on the substrate. The first resist layer is exposed by a direct write electron beam or laser energy source and developed, and the substrate is etched, to create first level phase shifting image segments on the substrate corresponding to areas of critical structures to be exposed with the EAPSM. The method then includes depositing a second resist layer on the substrate. Using a single frame exposure mask corresponding to non-critical areas outside the critical structure areas, the second resist layer is then exposed by simultaneous projection exposure. The method then includes developing the second resist layer and etching the substrate to remove the opaque material from the critical structure areas.