公开(公告)号：US5417803A

公开(公告)日：1995-05-23

申请号：US128839

申请日：1993-09-29

申请人： Michael Goldstein ,  Cari H. Shim

发明人： Michael Goldstein ,  Cari H. Shim

IPC分类号： C04B41/45 ,  C04B41/50 ,  C04B41/81 ,  C04B41/85 ,  C23C16/44 ,  C23C16/458 ,  C30B35/00 ,  C03C15/00 ,  B05D1/42

CPC分类号： C23C16/4404 ,  C04B41/459 ,  C04B41/5096 ,  C04B41/81 ,  C04B41/85 ,  C23C16/4581 ,  C30B35/00 ,  Y10T29/41

摘要： A silicon/silicon carbide material which eliminates contamination by outgassing and direct contact is described as well as wafer processing parts made of this material and wafer processing methods using the silicon/silicon carbide material. An ultraclean silicon/silicon carbide material may be formed by first forming a Si/SiC part by prior art methods. The Si/SiC part then is subjected to a temperature sufficient to cause the impurities within the silicon carbide to either react and/or diffuse into the silicon fill. The contaminated silicon fill is then removed, either by high temperature evaporation or by a chemical etch. Clean silicon is then impregnated within the pore space of the silicon carbide part. The part which results has ultraclean silicon and silicon carbide grains which have most, if not all, of the impurities removed from the surface of the grains. Thus, an ultraclean material results which will not outgas or directly contaminate silicon wafers.

摘要翻译： 描述了消除由除气和直接接触引起的污染的硅/碳化硅材料，以及由该材料制成的晶片处理部件和使用硅/碳化硅材料的晶片处理方法。 可以通过首先通过现有技术的方法形成Si / SiC部分来形成超硬硅/碳化硅材料。 然后，Si / SiC部分经受足以使碳化硅内的杂质反应和/或扩散到硅填料中的温度。 然后通过高温蒸发或通过化学蚀刻除去污染的硅填充物。 然后将清洁的硅浸渍在碳化硅部分的孔隙空间内。 结果的部分具有从谷粒表面去除的最多（如果不是全部）杂质的超纯硅和碳化硅颗粒。 因此，产生不会排出或直接污染硅晶片的超纯材料。

公开(公告)号：US5494439A

公开(公告)日：1996-02-27

申请号：US217363

申请日：1994-03-24

申请人： Michael Goldstein ,  Cari H. Shim

发明人： Michael Goldstein ,  Cari H. Shim

IPC分类号： C04B41/45 ,  C04B41/50 ,  C04B41/81 ,  C04B41/85 ,  C23C16/44 ,  C23C16/458 ,  C30B35/00 ,  C03C15/00

CPC分类号： C23C16/4404 ,  C04B41/459 ,  C04B41/5096 ,  C04B41/81 ,  C04B41/85 ,  C23C16/4581 ,  C30B35/00 ,  Y10T29/41

摘要： A silicon/silicon carbide material which eliminates contamination by outgassing and direct contact is described as well as wafer processing pans made of this material and wafer processing methods using the silicon/silicon carbide material. An ultraclean silicon/silicon carbide material may be formed by first forming a Si/SiC part by prior art methods. The Si/SiC part then is subjected to a temperature sufficient to cause the impurities within the silicon carbide to either react and/or diffuse into the silicon fill. The contaminated silicon fill is then removed, either by high temperature evaporation or by a chemical etch. Clean silicon is then impregnated within the pore space of the silicon carbide pan. The part which results has ultraclean silicon and silicon carbide grains which have most, if not all, of the impurities removed from the surface of the grains. Thus, an ultraclean material results which will not outgas or directly contaminate silicon wafers.

摘要翻译： 描述消除由除气和直接接触引起的污染物的硅/碳化硅材料以及由该材料制成的晶片加工盘和使用硅/碳化硅材料的晶片加工方法。 可以通过首先通过现有技术的方法形成Si / SiC部分来形成超硬硅/碳化硅材料。 然后，Si / SiC部分经受足以使碳化硅内的杂质反应和/或扩散到硅填料中的温度。 然后通过高温蒸发或通过化学蚀刻除去污染的硅填充物。 然后将清洁的硅浸渍在碳化硅盘的孔隙空间内。 结果的部分具有从谷粒表面去除的最多（如果不是全部）杂质的超纯硅和碳化硅颗粒。 因此，产生不会排出或直接污染硅晶片的超纯材料。