公开(公告)号：US06191456B1

公开(公告)日：2001-02-20

申请号：US09344927

申请日：1999-06-28

申请人： Michael Stoisiek ,  Dirk Vietzke

发明人： Michael Stoisiek ,  Dirk Vietzke

IPC分类号： H01L2976

CPC分类号： H01L29/7394

摘要： A lateral IGBT in an SOI configuration having a top side and an underside is proposed. The lateral IGBT has a drain zone extending to the top side and is of a first conductivity type. The underside of the LIGBT forms a substrate of a second conductivity type. A lateral insulation layer is situated between the substrate and the drain zone. At least one laterally formed region of the second conductivity type is situated in the drain zone, in the vicinity of the lateral insulation layer. These laterally formed regions being spaced apart from one another lying in one plane.

摘要翻译： 提出了具有顶侧和下侧的SOI配置中的横向IGBT。 横向IGBT具有延伸到顶侧并具有第一导电类型的漏极区。 LIGBT的下侧形成第二导电类型的衬底。 横向绝缘层位于衬底和漏区之间。 第二导电类型的至少一个横向形成的区域位于排水区中，在侧绝缘层附近。 这些横向形成的区域彼此间隔开位于一个平面中。