公开(公告)号：US11257734B2

公开(公告)日：2022-02-22

申请号：US16816874

申请日：2020-03-12

Applicant: Microchip Technology Inc.

Inventor： Damian McCann

IPC: H01L23/367 ,  H01L23/373

Abstract: A thermal management package for a semiconductor device includes a high dielectric constant material substrate, a high thermal conductivity slug disposed in a first window in the high dielectric constant material substrate and held therein by a first bonding material, an outer substrate formed from a material having a low dielectric constant and having a second window formed therein, the high dielectric constant material substrate disposed in the second window in the low dielectric constant outer substrate and held therein by a second bonding material.

公开(公告)号：US20210210402A1

公开(公告)日：2021-07-08

申请号：US16816874

申请日：2020-03-12

Applicant: Microchip Technology Inc.

Inventor： Damian McCann

IPC: H01L23/367 ,  H01L23/373

Abstract: A thermal management package for a semiconductor device includes a high dielectric constant material substrate, a high thermal conductivity slug disposed in a first window in the high dielectric constant material substrate and held therein by a first bonding material, an outer substrate formed from a material having a low dielectric constant and having a second window formed therein, the high dielectric constant material substrate disposed in the second window in the low dielectric constant outer substrate and held therein by a second bonding material.