公开(公告)号：US20240069745A1

公开(公告)日：2024-02-29

申请号：US17897784

申请日：2022-08-29

申请人： Micron Technology, Inc.

发明人： Hyungseok Kim ,  Vamsi Pavan Rayaprolu ,  Sampath K. Ratnam

IPC分类号： G06F3/06

CPC分类号： G06F3/0619 ,  G06F3/0611 ,  G06F3/0629 ,  G06F3/0679

摘要： An example method of performing read operation comprises: receiving a read request with respect to a set of memory cells of a memory device; determining a value of a media endurance metric of the set of memory cells; determining a programing temperature associated with the set of memory cells; determining a current operating temperature of the memory device; determining a voltage adjustment value based on the value of the media endurance metric, the programming temperature, and the current operating temperature; adjusting, by the voltage adjustment value, a bitline voltage applied to a bitline associated with the set of memory cells; and performing, using the adjusted bitline voltage, a read operation with respect to the set of memory cells.