公开(公告)号：US09219001B2

公开(公告)日：2015-12-22

申请号：US13951793

申请日：2013-07-26

Applicant: Micron Technology, Inc.

Inventor： Aaron R. Wilson ,  Larson Lindholm ,  David Hwang

IPC: H01L21/336 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L29/66795 ,  H01L29/7853

Abstract: Fin-FET (fin field-effect transistor) devices and methods of fabrication are disclosed. The fin-FET devices include dual fin structures that may form a channel region between a source region and a drain region. In some embodiments, the dual fin structures are formed by forming shallow trench isolation structures, using a pair of shallow trench isolation (STI) structures as a mask to define a recess in a portion of a substrate between the pair of STI structures, and recessing the pair of STI structures so that the resulting dual fin structures protrude from an active surface of the substrate. The dual fin structures may be used to form single-gate, double-gate, or triple-gate fin-FET devices. Electronic systems including such fin-FET devices are also disclosed.

Abstract translation: Fin-FET（鳍场效应晶体管）器件和制造方法被公开。 鳍式FET器件包括可在源极区域和漏极区域之间形成沟道区域的双鳍结构。 在一些实施例中，通过形成浅沟槽隔离结构，使用一对浅沟槽隔离（STI）结构作为掩模来形成双鳍结构，以在一对STI结构之间限定衬底的一部分中的凹部，以及凹陷 所述一对STI结构使得所得到的双翅片结构从所述基板的有效表面突出。 双鳍结构可用于形成单栅极，双栅极或三栅极鳍FET器件。 还公开了包括这种鳍式FET器件的电子系统。

公开(公告)号：US20130309839A1

公开(公告)日：2013-11-21

申请号：US13951793

申请日：2013-07-26

Applicant: Micron Technology, Inc.

Inventor： Aaron R. Wilson ,  Larson Lindholm ,  David Hwang

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L29/66795 ,  H01L29/7853

Abstract: Fin-FET (fin field-effect transistor) devices and methods of fabrication are disclosed. The fin-FET devices include dual fin structures that may form a channel region between a source region and a drain region. In some embodiments, the dual fin structures are formed by forming shallow trench isolation structures, using a pair of shallow trench isolation (STI) structures as a mask to define a recess in a portion of a substrate between the pair of STI structures, and recessing the pair of STI structures so that the resulting dual fin structures protrude from an active surface of the substrate. The dual fin structures may be used to form single-gate, double-gate, or triple-gate fin-FET devices. Electronic systems including such fin-FET devices are also disclosed.

Abstract translation: Fin-FET（鳍场效应晶体管）器件和制造方法被公开。 鳍式FET器件包括可在源极区域和漏极区域之间形成沟道区域的双鳍结构。 在一些实施例中，通过形成浅沟槽隔离结构，使用一对浅沟槽隔离（STI）结构作为掩模来形成双鳍结构，以在一对STI结构之间限定衬底的一部分中的凹部，以及凹陷 所述一对STI结构使得所得到的双翅片结构从所述基板的有效表面突出。 双鳍结构可用于形成单栅极，双栅极或三栅极鳍FET器件。 还公开了包括这种鳍式FET器件的电子系统。