公开(公告)号：US20250078902A1

公开(公告)日：2025-03-06

申请号：US18789682

申请日：2024-07-31

Applicant: Micron Technology, Inc.

Inventor： Sangjin Byeon

IPC: G11C11/4074 ,  G11C5/14 ,  G11C11/4076

Abstract: A method to attenuate excessive supply voltage fluctuations in a memory system comprising a memory controller and a memory device configured to store and retrieve data is provided. The method includes detecting a potential supply voltage fluctuation at a voltage-threshold violation detection circuit in the memory controller, wherein the potential supply voltage fluctuation corresponds to an inrushing current from an initialization state or a surge of current from a switch to a busy state after staying in a long-term idle state. In response to detecting the potential supply voltage fluctuation, the method includes generating a control signal from the voltage-threshold violation detection circuit. The method includes transmitting the control signal from the memory controller to the memory device. The method includes decoding the control signal in the memory device. The method includes attenuating the potential supply voltage fluctuation to prepare for memory access.