公开(公告)号：US20250040182A1

公开(公告)日：2025-01-30

申请号：US18781766

申请日：2024-07-23

Applicant: Micron Technology, Inc.

Inventor： Paolo Fantini ,  Andrea Ghetti ,  Benjamin Chu-Kung ,  Sara Moon Villa

IPC: H01L29/786 ,  G11C16/04 ,  H01L29/417 ,  H01L29/66 ,  H10B41/27

Abstract: Systems, methods, and apparatuses are provided for an asymmetric vertical thin film transistor selector. An apparatus includes first and second source/drain regions formed on a substrate, a channel separating the first source/drain region and the second source/drain region, and a gate separated from the channel by a gate dielectric material. The first source/drain region, the second source/drain region, the channel, and the gate form a vertical thin film transistor, a first end of the channel is coupled to the first source/drain region and extends beyond a first end of the gate, and a second end of the channel is coupled to the second source/drain region and does not extend beyond a second end of the gate that is opposite the first end of the gate. A contact in the substrate is coupled to the first source/drain region and a sense line is coupled to the second source/drain region.