公开(公告)号：US20250063737A1

公开(公告)日：2025-02-20

申请号：US18753940

申请日：2024-06-25

Applicant: Micron Technology, Inc.

Inventor： Beth R. Cook ,  Zhuo Chen ,  Yixin Yan ,  Sarah P. Sredzinski ,  Gloria Y. Yang ,  Kathryn H. Russo

IPC: H10B53/30

Abstract: An electronic device comprises a memory array comprising access lines, data lines, and memory cells. Each memory cell is coupled to an associated access line and an associated data line and each memory cell comprises an access device, and a capacitor adjacent to the access device. The capacitor comprises a first electrode, a second electrode separated from the first electrode by an insulative material, and a leaker device adjacent to the first electrode. The second electrode and the leaker device extend through a lattice insulative material adjacent to the first electrode. The leaker device exhibits a substantially circular cross-sectional shape in a direction that is transverse to a direction in which the leaker device extends, with portions of the leaker device extending within a recessed region of the insulative material. Methods of forming electronic devices are also disclosed.