公开(公告)号：US12080756B2

公开(公告)日：2024-09-03

申请号：US17647912

申请日：2022-01-13

Applicant: Micron Technology, Inc.

Inventor： Gaurav Musalgaonkar ,  Naveen Kaushik ,  Sonam Jain ,  Haitao Liu ,  Chittoor Ranganathan Parthasarathy

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0626 ,  H01L27/088 ,  H01L29/66681 ,  H01L29/7816

Abstract: An apparatus includes lightly doped drain regions vertically extending into a semiconductor substrate. A channel region is horizontally interposed between the lightly doped drain regions, and source/drain regions vertically extend into the lightly doped drain regions. Breakdown-enhancement implant intrusion regions are within the lightly doped drain regions and are horizontally interposed between the channel region and the source/drain regions. The breakdown enhancement implant regions have a different chemical species than the lightly doped drain regions and have upper boundaries vertically underlying upper boundaries of the lightly doped drain regions. The apparatus also has a gate structure vertically overlying the channel regions and it is horizontally interposed between the breakdown-enhancement implant regions. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20230223434A1

公开(公告)日：2023-07-13

申请号：US17647912

申请日：2022-01-13

Applicant: Micron Technology, Inc.

Inventor： Gaurav Musalgaonkar ,  Naveen Kaushik ,  Sonam Jain ,  Haitao Liu ,  Chittoor Ranganathan Parthasarathy

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0626 ,  H01L27/088 ,  H01L29/7816 ,  H01L29/66681

Abstract: An apparatus includes lightly doped drain regions vertically extending into a semiconductor substrate. A channel region is horizontally interposed between the lightly doped drain regions, and source/drain regions vertically extend into the lightly doped drain regions. Breakdown-enhancement implant intrusion regions are within the lightly doped drain regions and are horizontally interposed between the channel region and the source/drain regions. The breakdown enhancement implant regions have a different chemical species than the lightly doped drain regions and have upper boundaries vertically underlying upper boundaries of the lightly doped drain regions. The apparatus also has a gate structure vertically overlying the channel regions and it is horizontally interposed between the breakdown-enhancement implant regions. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20240405066A1

公开(公告)日：2024-12-05

申请号：US18807639

申请日：2024-08-16

Applicant: Micron Technology, Inc.

Inventor： Gaurav Musalgaonkar ,  Naveen Kaushik ,  Sonam Jain ,  Haitao Liu ,  Chittoor Ranganathan Parthasarathy

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: An apparatus includes lightly doped drain regions vertically extending into a semiconductor substrate. A channel region is horizontally interposed between the lightly doped drain regions, and source/drain regions vertically extend into the lightly doped drain regions. Breakdown-enhancement implant intrusion regions are within the lightly doped drain regions and are horizontally interposed between the channel region and the source/drain regions. The breakdown enhancement implant regions have a different chemical species than the lightly doped drain regions and have upper boundaries vertically underlying upper boundaries of the lightly doped drain regions. The apparatus also has a gate structure vertically overlying the channel regions and it is horizontally interposed between the breakdown-enhancement implant regions. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.