公开(公告)号：US20250157828A1

公开(公告)日：2025-05-15

申请号：US18896782

申请日：2024-09-25

Applicant: Micron Technology, Inc.

Inventor： Youngrae Kim ,  Ying-Ta Chiu ,  Wei Hung Tang

IPC: H01L21/56 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

Abstract: A semiconductor device assembly is provided. The assembly includes a substrate and a stack of semiconductor devices. The stack of semiconductor devices includes core semiconductor devices and a top semiconductor device disposed at the top of the stack. Each core device has a first thickness. The top device has a second thickness that is greater than the first thickness. Every device in the stack has a gap beneath it, with underfill material filling every gap and covering the sides of the core semiconductor devices. The underfill material has a squeeze-out region protruding away from the stack a first distance, and a squeeze-up region extending up the top semiconductor device a second distance. The second distance measures at least the same as the height of the gap beneath the devices in the stack.