公开(公告)号：US20090302349A1

公开(公告)日：2009-12-10

申请号：US12540216

申请日：2009-08-12

申请人： Min Hung Lee ,  Cheng Yeh Yu ,  Chee Wee Liu

发明人： Min Hung Lee ,  Cheng Yeh Yu ,  Chee Wee Liu

IPC分类号： H01L29/78 ,  H01L21/20

CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664

摘要： A strained germanium field effect transistor (FET) and method of fabricating the same is related to the strained Ge field effect transistor with a thin and pure Ge layer as a carrier channel. The pure Ge layer with the thickness between 1 nm and 10 nm is formed between an unstrained substrate and a gate insulation layer, and directly contacts with the unstrained substrate. The gate is disposed on the gate insulation layer. The germanium layer is used as a carrier transport channel of the strained Ge FET to improve the drive current and the carrier mobility, and to increase the devices performance effectively. Furthermore, a Si protective layer with extremely thin thickness can be deposed between and directly contacts with the gate insulation layer and the pure Ge layer.

摘要翻译： 应变锗场效应晶体管（FET）及其制造方法涉及具有薄而纯的Ge层作为载流子通道的应变Ge场效应晶体管。 在无应变衬底和栅极绝缘层之间形成厚度在1nm和10nm之间的纯Ge层，并且与无约束衬底直接接触。 栅极设置在栅极绝缘层上。 锗层用作应变Ge FET的载流子传输通道，以改善驱动电流和载流子迁移率，并有效提高器件性能。 此外，具有极薄厚度的Si保护层可以被放置在栅绝缘层和纯Ge层之间并直接接触。