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公开(公告)号:US20110171584A1
公开(公告)日:2011-07-14
申请号:US12979260
申请日:2010-12-27
申请人: Min-Chul SUH , Sin-Doo Lee , Woo-Suk Choi , Min-Hoi Kim
发明人: Min-Chul SUH , Sin-Doo Lee , Woo-Suk Choi , Min-Hoi Kim
IPC分类号: G03F7/20
CPC分类号: H01L51/0016 , H01L27/322 , H01L51/0003 , H01L51/0545 , H01L51/56
摘要: A method of forming a high resolution organic thin film pattern, the method including forming a first organic layer on a substrate; selectively removing the first organic layer by selectively irradiating light energy onto the first organic layer, and forming a remaining part of the first organic layer as a sacrifice layer; forming a second organic layer on the substrate and the entire surface of the sacrifice layer; and lifting off the second organic layer formed on the sacrifice layer by removing the sacrifice layer using a solvent, and forming the remaining second organic layer as a second organic layer pattern.
摘要翻译: 一种形成高分辨率有机薄膜图案的方法,所述方法包括在基底上形成第一有机层; 通过选择性地将光能照射到第一有机层上并且形成作为牺牲层的第一有机层的剩余部分来选择性地去除第一有机层; 在基底和牺牲层的整个表面上形成第二有机层; 以及通过使用溶剂去除所述牺牲层来提起形成在所述牺牲层上的所述第二有机层,以及形成剩余的所述第二有机层作为第二有机层图案。
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公开(公告)号:US08778600B2
公开(公告)日:2014-07-15
申请号:US12979260
申请日:2010-12-27
申请人: Min-Chul Suh , Sin-Doo Lee , Won-Suk Choi , Min-Hoi Kim
发明人: Min-Chul Suh , Sin-Doo Lee , Won-Suk Choi , Min-Hoi Kim
IPC分类号: G03F7/26
CPC分类号: H01L51/0016 , H01L27/322 , H01L51/0003 , H01L51/0545 , H01L51/56
摘要: A method of forming a high resolution organic thin film pattern, the method including forming a first organic layer on a substrate; selectively removing the first organic layer by selectively irradiating light energy onto the first organic layer, and forming a remaining part of the first organic layer as a sacrifice layer; forming a second organic layer on the substrate and the entire surface of the sacrifice layer; and lifting off the second organic layer formed on the sacrifice layer by removing the sacrifice layer using a solvent, and forming the remaining second organic layer as a second organic layer pattern.
摘要翻译: 一种形成高分辨率有机薄膜图案的方法,所述方法包括在基底上形成第一有机层; 通过选择性地将光能照射到第一有机层上并且形成作为牺牲层的第一有机层的剩余部分来选择性地去除第一有机层; 在基底和牺牲层的整个表面上形成第二有机层; 以及通过使用溶剂去除所述牺牲层来提起形成在所述牺牲层上的所述第二有机层,以及形成剩余的所述第二有机层作为第二有机层图案。
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