Resist composition and method for manufacturing semiconductor device using the resist composition
    1.
    发明授权
    Resist composition and method for manufacturing semiconductor device using the resist composition 失效
    使用抗蚀剂组合物制造半导体器件的抗蚀剂组合物和方法

    公开(公告)号:US06803170B2

    公开(公告)日:2004-10-12

    申请号:US09925679

    申请日:2001-08-10

    IPC分类号: G03F7004

    摘要: A resist composition comprises: at least one type of a first compound having two or more intramolecular adamantyl structures represented by the chemical formula 1 below; a base resin; and a second compound which generates an acid by active beam irradiation. wherein X is —(OCO)m—(CH2)n—(COO)m—, where m=0 or 1 and n=0, 1, 2 or 3 provided when n=0, m=0; and Y and Z are H, OH, F, Cl, Br, R or COOR, where Y may be Z, or Y and Z may be introduced in a single adamantyl structure and R represents a straight or branched alkyl group having 1 to 8 carbon atoms.

    摘要翻译: 抗蚀剂组合物包含:至少一种具有由下述化学式1表示的两个或更多个分子内金刚烷结构的第一化合物; 基础树脂; 和其中m是 - (OCO)m-(CH 2)n - (COO)m - ,其中m = 0或1,n = 0,1,2或3提供的第二化合物,其通过主动束照射产生酸。 当n = 0时,m = 0; 并且Y和Z是H,OH,F,Cl,Br,R或COOR,其中Y可以是Z,或者Y和Z可以被引入单金刚烷基结构中,R代表具有1-8个碳原子的直链或支链烷基 碳原子。