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    PRIMARY DISTILLATION BORON REDUCTION
    2.
    发明申请
    PRIMARY DISTILLATION BORON REDUCTION 审中-公开
    主要蒸馏还原硼

    公开(公告)号：US20160152481A1

    公开(公告)日：2016-06-02

    申请号：US14556640

    申请日：2014-12-01

    申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)

    发明人： April Ashworth ,  Michael W. Keevan

    IPC分类号： C01B33/039 ,  B01J8/24 ,  C01B33/021

    CPC分类号： C01B33/039 ,  C01B33/021 ,  C01B33/035 ,  C01B33/10763 ,  C01B33/10778

    摘要： The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.

    摘要翻译： 本发明涉及具有减少量的硼化合物杂质的多晶硅的制造装置和方法。 特别是从制造多晶硅的方法中除去硼化合物，同时通过蒸馏纯化三氯硅烷。 本发明将冷凝的液体三氯硅烷进料到初级蒸馏塔内部的液面之下的一级蒸馏塔中，从而在一级蒸馏塔内部接触时洗涤硼杂质。 结果是三氯硅烷离开主蒸馏塔，总硼量至少少于10倍。