专利检索 ap:("Mitsumasa Koyanagi" OR "Hiroyuki Kurino" OR "Toshiaki Kurino" OR "Jeoung Shim") AND inv:"Jeoung Shim" 第 1 页

1.

发明申请
Method of forming nickel-silicon compound, semiconductor device, and semiconductor device manufacturing method 审中-公开
标题翻译：形成镍硅化合物的方法，半导体器件和半导体器件的制造方法

公开(公告)号：US20060057845A1

公开(公告)日：2006-03-16

申请号：US11207562

申请日：2005-08-19

申请人： Mitsumasa Koyanagi , Hiroyuki Kurino , Toshiaki Kurino , Jeoung Shim

发明人： Mitsumasa Koyanagi , Hiroyuki Kurino , Toshiaki Kurino , Jeoung Shim

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 , H01L29/665 , H01L29/78

摘要： There is disclosed a method of forming a nickel film on a silicon substrate or a silicon film, followed by applying an annealing process such that a final annealing temperature TH is in the range of 500° C.

摘要翻译： 公开了在硅衬底或硅膜上形成镍膜的方法，然后进行退火处理，使得最终退火温度TH在500℃的范围内。

2.

发明申请
Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device 失效
标题翻译：镍硅复合物形成方法，半导体器件制造方法和半导体器件

公开(公告)号：US20060003584A1

公开(公告)日：2006-01-05

申请号：US11185157

申请日：2005-07-20

申请人： Mitsumasa Koyanagi , Jeoung Shim , Hiroyuki Kurino

发明人： Mitsumasa Koyanagi , Jeoung Shim , Hiroyuki Kurino

IPC分类号： H01L21/44 , H01L21/4763

CPC分类号： H01L29/7834 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/66628

摘要： A nickel-silicon compound forming method is disclosed which comprises forming nickel on at least one of only silicon and a compound containing silicon, and performing stepwise-heating of the nickel together with the at least one of only silicon and the compound containing silicon.

摘要翻译： 公开了一种镍硅化合物形成方法，其包括在仅硅和含硅化合物中的至少一种上形成镍，并且与仅含硅和含硅化合物中的至少一种一起进行镍的逐步加热。