公开(公告)号：US4526826A

公开(公告)日：1985-07-02

申请号：US502261

申请日：1983-06-08

申请人： Monika O. Ten Eyck ,  Martin R. Kasprzyk ,  Richard E. Tressler

发明人： Monika O. Ten Eyck ,  Martin R. Kasprzyk ,  Richard E. Tressler

IPC分类号： H01L21/223 ,  C30B31/16 ,  B32B9/00

CPC分类号： C30B31/165 ,  Y10S252/951 ,  Y10T428/24273 ,  Y10T428/249964 ,  Y10T428/249986

摘要： New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.

摘要翻译： 公开了新的多孔半导体掺杂剂载体以及用于通过n或p型掺杂剂如磷，砷，锑，硼镓，铝，锌，硅，碲，锡的n型或p型掺杂剂的气相传输来扩散掺杂半导体的方法 和镉至半导体主机基板; 其中掺杂剂载体由通过浸渍形成的刚性多相尺寸稳定的耐火泡沫体以及随后的开孔有机聚合物泡沫体的热破坏组成。