公开(公告)号：US20140043110A1

公开(公告)日：2014-02-13

申请号：US14055104

申请日：2013-10-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tsutomu KOBORI ,  Shigeki KOYA ,  Akishige NAKAJIMA ,  Yasushi SHIGENO

IPC: H01P1/15

CPC classification number: H01P1/15 ,  H04B1/48

Abstract: A semiconductor apparatus includes multiple field effect transistors provided between an antenna terminal to be connected to an antenna and multiple external terminals through which RF signals are capable of being supplied and a voltage generating circuit. When the field effect transistors provided between one of the multiple external terminals and the antenna terminal are turned off, the voltage generating unit charges a capacitor via a resistor circuit by switching the polarity of the RF signal to be supplied to the other external terminal with respect to the control signal and outputs a voltage based on a sum of the charge voltage and the voltage of the control signal as the gate drive voltage. The resistor circuit includes a first resistor including positive temperature characteristics and a second resistor including negative temperature characteristics.

Abstract translation: 半导体装置包括设置在要连接到天线的天线端子与能够提供RF信号的多个外部端子之间的多个场效应晶体管和电压产生电路。 当设置在多个外部端子中的一个外部端子和天线端子之间的场效应晶体管截止时，电压产生单元通过电阻电路对电容器充电，通过将要提供给另一个外部端子的RF信号的极性相对于 并输出基于充电电压和控制信号的电压之和的电压作为栅极驱动电压。 电阻电路包括具有正温度特性的第一电阻器和包括负温度特性的第二电阻器。