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公开(公告)号:US20240284798A1
公开(公告)日:2024-08-22
申请号:US18695245
申请日:2022-09-29
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor: Kenichi UCHIDA , Rajkumar MODAK , Yuya SAKURABA , Weinan ZHOU , Hossein SEPEHRI AMIN
Abstract: [Object] To provide a thermoelectric body that can be deposited on any substrate, which is not limited to a single crystal bulk material or an epitaxially grown thin film, and is capable of exhibiting high coercive force and residual magnetization with respect to in-plane magnetization.
[Solving Means] A thermoelectric body that is a magnetic film for use in a thermoelectric generation element utilizing an anomalous Nernst effect, characterized by having an easy axis of magnetization in an in-plane direction and an amorphous structure. Favorably, the thermoelectric body is characterized in that SmpCo100-p (0