公开(公告)号：US10566655B2

公开(公告)日：2020-02-18

申请号：US15776229

申请日：2016-12-26

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Kunimitsu Kataoka ,  Chika Takamori ,  Haruo Ishizaki ,  Junji Akimoto

IPC: H01M10/0525 ,  H01M10/0562 ,  C01G35/00 ,  C01G33/00

Abstract: There are provided a solid electrolyte material having high density and ion conductivity, and an all solid lithium ion secondary battery using the solid electrolyte material. The solid electrolyte material has a garnet-related structure which has a chemical composition represented by Li7-x-yLa3Zr2-x-yTaxNbyO12 (0≤x≤0.8, 0.2≤y≤1, and 0.2≤x+y≤1) and relative density of 99% or greater, and belongs to a cubic system. The solid electrolyte material has lithium ion conductivity which is equal to or greater than 1.0×10−3 S/cm. The solid electrolyte material has a lattice constant a which satisfies 1.28 nm≤a≤1.30 nm, and has a lithium ion which occupies only two or more 96h sites in a crystal structure. The all solid lithium ion secondary battery includes a positive electrode, a negative electrode, and a solid electrolyte. The solid electrolyte includes the solid electrolyte material.

公开(公告)号：US10745289B2

公开(公告)日：2020-08-18

申请号：US15520339

申请日：2015-10-26

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Tetsuo Tsuchiya ,  Haruo Ishizaki ,  Tomohiko Nakajima ,  Kentaro Shinoda

IPC: C01G31/02 ,  C01G31/00 ,  C01G53/00 ,  C01G49/00 ,  H01L21/02 ,  G01J5/00

Abstract: Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.