公开(公告)号：US20160320458A1

公开(公告)日：2016-11-03

申请号：US15107628

申请日：2014-12-26

Applicant: NATIONAL UNIVERSITY OF SINGAPORE

Inventor： GOPINADHAN KALON ,  HYUNSOO YANG ,  YOUNG JUN SHIN ,  ANTONIO HELIO CASTRO NETO

IPC: G01R33/09 ,  H01F10/00

Abstract: A graphene structure is provided. The graphene structure comprises a substrate layer and at least two graphene layers disposed on the substrate. The at least two graphene layers comprises a gate voltage tuned layer and an effective graphene layer and the effective graphene layer comprises one or more graphene layers. A magnetoresistance ratio of the graphene structure is determined by a difference in a charge mobility and/or a carrier density between the gate voltage tuned layer and the effective graphene layer. The charge mobility and/or the carrier density of the gate no voltage tuned layer is tunable by a gate voltage applied to the graphene structure. A magnetic field sensor comprising the graphene structure is also provided.

Abstract translation: 提供了石墨烯结构。 石墨烯结构包括基底层和设置在基底上的至少两个石墨烯层。 所述至少两个石墨烯层包括栅极电压调谐层和有效石墨烯层，并且所述有效石墨烯层包括一个或多个石墨烯层。 石墨烯结构的磁阻比由栅极电压调谐层和有效石墨烯层之间的电荷迁移率和/或载流子密度的差确定。 栅极无电压调谐层的电荷迁移率和/或载流子密度可通过施加到石墨烯结构的栅极电压来调节。 还提供了包括石墨烯结构的磁场传感器。