公开(公告)号：US20220173243A1

公开(公告)日：2022-06-02

申请号：US17538418

申请日：2021-11-30

申请人： NEXPERIA B.V.

发明人： Kilian ONG ,  Benjamin HUNG

IPC分类号： H01L29/78 ,  H01L29/747 ,  H01L29/06

摘要： A semiconductor device is provided that includes a substrate, a channel with the channel positioned on the top of the substrate, and a drift with the drift positioned on the top of the channel. The semiconductor device further includes a first poly positioned in the channel and the drift, and a second poly positioned on the top of the first poly and positioned in the drift. The first poly and the second poly are isolated by a gate oxide and a RESURF oxide, respectively, from the channel and from the drift.