INTEGRATED FINGERPRINT AND FORCE SENSOR
    1.
    发明申请

    公开(公告)号:US20200234023A1

    公开(公告)日:2020-07-23

    申请号:US16634495

    申请日:2018-07-25

    Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) sensor including both fingerprint and force sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs either piezoresistive or piezoelectric sensing elements for detecting force and also capacitive or ultrasonic sensing elements for detecting fingerprint patterns. Both force and fingerprint sensing elements are electrically connected to integrated circuits on the same chip. The integrated circuits can amplify, digitize, calibrate, store, and/or communicate force values and/or fingerprint patterns through output pads to external circuitry.

    SYSTEMS AND METHODS FOR CONTINUOUS MODE FORCE TESTING

    公开(公告)号:US20220228936A1

    公开(公告)日:2022-07-21

    申请号:US17615208

    申请日:2020-06-01

    Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.

    FORCE ATTENUATOR FOR FORCE SENSOR
    3.
    发明申请

    公开(公告)号:US20200309615A1

    公开(公告)日:2020-10-01

    申请号:US16764992

    申请日:2018-11-16

    Abstract: Described herein is a force attenuator for a force sensor. The force attenuator can linearly attenuate the force applied on the force sensor and therefore significantly extend the maximum sensing range of the force sensor. The area ratio of the force attenuator to the force sensor determines the maximum load available in a linear fashion.

    SEALED FORCE SENSOR WITH ETCH STOP LAYER

    公开(公告)号:US20210172813A1

    公开(公告)日:2021-06-10

    申请号:US16761373

    申请日:2018-11-02

    Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

    STRAIN TRANSFER STACKING IN A MEMS FORCE SENSOR

    公开(公告)号:US20200149983A1

    公开(公告)日:2020-05-14

    申请号:US16632795

    申请日:2018-07-19

    Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including a sensor die and a strain transfer layer. The MEMS force sensor employs piezoresistive or piezoelectric strain gauges for strain sensing where the strain is transferred through the strain transfer layer, which is disposed on the top or bottom side of the sensor die. In the case of the top side strain transfer layer, the MEMS force sensor includes mechanical anchors. In the case of the bottom side strain transfer layer, the protection layer is added on the top side of the sensor die for bond wire protection.

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