公开(公告)号：US20210292911A1

公开(公告)日：2021-09-23

申请号：US17259609

申请日：2019-07-17

Applicant: NHK Spring Co., Ltd. ,  IZUMI TECHNO INC.

Inventor： Toshihiko Hanamachi ,  Shuhei Morota ,  Go Takahara ,  Masaru Takimoto ,  Hibiki Yokoyama ,  Hiroshi Mitsuda ,  Yoshihito Araki ,  Kengo Ajisawa

IPC: C23C28/04

Abstract: A member for a plasma processing device includes: an aluminum base material; and an oxide film formed on the aluminum base material and having a porous structure, the oxide film including a first oxide film formed on a surface of the aluminum base material, a second oxide film formed on the first oxide film, and a third oxide film formed on the second oxide film, wherein the first oxide film is harder than the second oxide film and the third oxide film, and a hole formed in each of the first oxide film, the second oxide film and the third oxide film is sealed.