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公开(公告)号:US20180062077A1
公开(公告)日:2018-03-01
申请号:US15529907
申请日:2014-12-24
申请人: NILOY MUKHERJEE , RAVI PILLARISETTY , PRASHANT MAJHI , UDAY SHAH , RYAN E ARCH , MARKUS KUHN , JUSTIN S. BROCKMAN , HUIYING LIU , ELIJAH V KARPOV , KAAN OGUZ
发明人: NILOY MUKHERJEE , RAVI PILLARISETTY , PRASHANT MAJHI , UDAY SHAH , RYAN E ARCH , MARKUS KUHN , JUSTIN S. BROCKMAN , HUIYING LIU , ELIJAH V KARPOV , KAAN OGUZ
IPC分类号: H01L45/00
摘要: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.