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公开(公告)号：US20220096978A1
公开(公告)日：2022-03-31
申请号：US17429989
申请日：2020-03-03
发明人： Tomoya OHASHI , Toyoshiro YOSHIDA , Suguru SASSA
摘要： A production method for an organic solvent that contains less metal impurities which when manufacturing a semiconductor device. This production method passes a liquid through a filter cartridge, wherein the filter cartridge is obtained by layering types of base cloths for filtration, wherein the base cloths for filtration are nonwoven fabric obtained by chemically bonding a metal adsorption group to polyolefin fibers, the base cloths for filtration include nonwoven fabric layer A and nonwoven fabric layer B, the nonwoven fabric layer A includes polyolefin fibers to which a sulfonate group is chemically bonded as a metal adsorption group, the nonwoven fabric layer B includes polyolefin fibers bonded thereto as a metal adsorption group at least one selected from the group consisting of an amino group, an N-methyl-D-glucamine group, an iminodiacetate group, an iminodiethanol group, an amidoxime group, a phosphate group, a carboxylate group, and an ethylene diamine triacetate group.
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公开(公告)号：US20210397091A1
公开(公告)日：2021-12-23
申请号：US17296408
申请日：2019-12-18
发明人： Tomoya OHASHI , Toyoshiro YOSHIDA , Suguru SASSA
IPC分类号： G03F7/11 , C09D181/04 , B01J20/26 , B01J20/28 , B01D39/16
摘要： A method for producing a coating film-forming composition for lithography, including a step for passing a liquid through a filter cartridge. The filter cartridge is obtained by layering more than one type of filtration base fabrics or winding same around a hollow inner tube, wherein: the fabrics are non-woven fabrics in which metal-adsorbing groups are chemically bonded to polyolefin fibers; the fabrics contain non-woven fabric layers A and B; layer A is configured from polyolefin fibers to which sulfonic acid groups are chemically bonded as metal-adsorbing groups; and layer B is configured from polyolefin fibers to which at least one type selected from among amino groups, N-methyl-D-glucamine groups, iminodiacetic acid groups, iminodiethanol groups, amidoxime groups, phosphoric acid groups, carboxylic acid groups and ethylenediamine triacetic acid groups chemically bonded as metal-adsorbing groups. Thus, the amount of metal impurities that are the cause of minute defects on a wafer can be reduced.
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