DEVICE AND METHOD FOR PRODUCING HIGH-PURITY INDUSTRIAL SILICON

    公开(公告)号:US20210331929A1

    公开(公告)日:2021-10-28

    申请号:US17156161

    申请日:2021-01-22

    IPC分类号: C01B33/021

    摘要: A device and a method for producing a high-purity industrial silicon, wherein the device is a refining ladle provided with a steel plate layer, a heat insulation layer, a heat preservation layer, a protective layer and a working layer from outside to inside. The refining ladle is provided with two conical oxygen inlet channels and two conical argon inlet channels at the bottom. The method comprises: preparing a molten silicon with temperature≥2200° C.; pouring the molten silicon into a refining ladle after introducing oxygen and argon thereto and keeping the gas pressure at 1 standard atmospheric pressure, and keeping the molten silicon at 1700-1900° C.; adding a slag-forming agent thereto, and introducing oxygen and argon from the refining ladle bottom, obtaining a slag molten silicon; cooling the slag molten silicon to ambient temperature, solidifying and separating, obtaining a high-purity industrial silicon.