Semiconductor device manufacture with in-line hotspot detection

    公开(公告)号:US12057355B2

    公开(公告)日:2024-08-06

    申请号:US17607044

    申请日:2020-04-28

    Applicant: NOVA LTD

    CPC classification number: H01L22/24 G06F30/367 G06F30/398 G06F2119/18

    Abstract: Controlling semiconductor device manufacture by acquiring training scatterometric signatures collected at training locations on training semiconductor wafers and corresponding to locations within a predefined design of a training semiconductor device, the training signatures collected after predefined processing steps during manufacture of the device on the training wafers, acquiring manufacturing outcome data associated with the training locations, training a prediction model using the training signatures and the manufacturing outcome data, and applying the prediction model to a candidate scatterometric signature to predict a manufacturing outcome, the candidate signature collected at a candidate location on a candidate semiconductor wafer, the candidate location corresponding to a location within the same predefined design of a candidate semiconductor device, the candidate signature collected after any of the processing steps during manufacture of the candidate device on the candidate wafer.

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