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公开(公告)号:US20230374695A1
公开(公告)日:2023-11-23
申请号:US18199285
申请日:2023-05-18
Applicant: NS Nanotech, Inc.
Inventor: Evrard LACROIX , Seth COE-SULLIVAN , Matthew STEVENSON , David LALEYAN
CPC classification number: C30B9/06 , C30B9/10 , C30B29/403
Abstract: To produce hexagonal boron nitride (h-BN), boron and nitrogen are added to a metallic solvent in a crucible in a reaction chamber and heat-treated. In an absorption step, a first soak is performed at a first temperature that is high enough to cause absorption of the nitrogen and boron into the metallic solvent. In a nucleation step after the absorption step, the first temperature is rapidly reduced to a second temperature, and h-BN nuclei are formed in the metallic solvent. In a growth step after the nucleation step, a second soak is performed at the second temperature to grow the h-BN nuclei. After the growth step, the h-BN nuclei are separated from the metallic solvent.