公开(公告)号：US20230228792A1

公开(公告)日：2023-07-20

申请号：US17998324

申请日：2020-05-14

申请人： NTT ADVANCED TECHNOLOGY CORPORATION

发明人： Akira KODAIRA ,  Takashi MARUYAMA ,  Satoshi OKU

IPC分类号： G01Q40/02

CPC分类号： G01Q40/02

摘要： A substrate (101) is etched by etching processing with crystal anisotropy, thereby forming a recess (104) from the main surface of the substrate (101) to the inside of the substrate (101). A side surface (105) is almost a (111) plane, and the etching hardly progresses. As a result, a cross section of the recess (104) perpendicular to the longitudinal direction has a rectangular shape. Since an opening (103) of a mask pattern (102) has a rectangular shape in a planar view, the opening of the recess (104) has a rectangular shape in a planar view, and the recess (104) is formed into, for example, a rectangular parallelepiped shape. The recess (104) includes a side surface (105) that forms one plane perpendicular to the main surface of the substrate (101). The side surface (105) is a facet surface and is a tilting surface tilted from the (111) plane.