公开(公告)号：US20130193417A1

公开(公告)日：2013-08-01

申请号：US13745918

申请日：2013-01-21

Applicant: NXP B. V.

Inventor： Youri Victorovitch Ponomarev ,  David Tio Castro ,  Roel Daamen

IPC: H01L51/42 ,  H01L51/00

CPC classification number: G01N27/048 ,  G01N27/121 ,  G01N27/223 ,  G01N33/0036 ,  H01L27/144 ,  H01L31/18 ,  H01L51/0034 ,  H01L51/42

Abstract: Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，包括：基板，包括至少一个光传感器; 在衬底上的互连结构; 所述互连结构上的至少一个钝化层，所述钝化层包括所述至少一个光传感器上的第一区域; 以及气体传感器，例如至少部分地在所述至少一个钝化层的另一区域上的湿度传感器，其中所述气体传感器包括位于第一电极和第二电极之间的气体敏感层，所述气体敏感层还包括 在第一区域的部分。 还公开了制造这种IC的方法。