公开(公告)号：US08576635B2

公开(公告)日：2013-11-05

申请号：US13176156

申请日：2011-07-05

申请人： Nam Kyeong Kim ,  Kyoung Chul Yang ,  Young Jin Woo ,  Tae Hyun Kim

发明人： Nam Kyeong Kim ,  Kyoung Chul Yang ,  Young Jin Woo ,  Tae Hyun Kim

IPC分类号： G11C16/04

CPC分类号： G11C16/16 ,  G11C16/0483

摘要： A nonvolatile memory device includes memory cell blocks each configured to comprise memory cells erased by an erase voltage, supplied to a word line, and a bulk voltage supplied to a bulk, a bias voltage generator configured to generate a first erase voltage, having a first pulse width and a first amplitude, in order to perform the erase operation of the memory cells and a second erase voltage, having a second pulse width narrower than the first pulse width and a second amplitude lower than the first amplitude, in order to perform an additional erase operation if an unerased memory cell is detected after the erase operation is performed, and a bulk voltage generator configured to generate the bulk voltage.

摘要翻译： 非易失性存储器件包括存储单元块，每个存储单元块被配置为包括被提供给字线的擦除电压擦除的存储器单元和提供给块的体电压;偏置电压发生器，被配置为产生第一擦除电压， 脉冲宽度和第一幅度，以便执行具有比第一脉冲宽度窄的第二脉冲宽度和低于第一幅度的第二幅度的存储单元的擦除操作和第二擦除电压，以便执行 在执行擦除操作之后检测到未故障存储器单元的附加擦除操作，以及被配置为产生体电压的体电压发生器。

公开(公告)号：US20120008395A1

公开(公告)日：2012-01-12

申请号：US13176156

申请日：2011-07-05

申请人： Nam Kyeong Kim ,  Kyoung Chul Yang ,  Young Jin Woo ,  Tae Hyun Kim

发明人： Nam Kyeong Kim ,  Kyoung Chul Yang ,  Young Jin Woo ,  Tae Hyun Kim

IPC分类号： G11C16/16

CPC分类号： G11C16/16 ,  G11C16/0483

摘要： A nonvolatile memory device includes memory cell blocks each configured to comprise memory cells erased by an erase voltage, supplied to a word line, and a bulk voltage supplied to a bulk, a bias voltage generator configured to generate a first erase voltage, having a first pulse width and a first amplitude, in order to perform the erase operation of the memory cells and a second erase voltage, having a second pulse width narrower than the first pulse width and a second amplitude lower than the first amplitude, in order to perform an additional erase operation if an unerased memory cell is detected after the erase operation is performed, and a bulk voltage generator configured to generate the bulk voltage.

摘要翻译： 非易失性存储器件包括存储单元块，每个存储单元块被配置为包括被提供给字线的擦除电压擦除的存储器单元和提供给块的体电压;偏置电压发生器，被配置为产生第一擦除电压， 脉冲宽度和第一幅度，以便执行具有比第一脉冲宽度窄的第二脉冲宽度和低于第一幅度的第二幅度的存储单元的擦除操作和第二擦除电压，以便执行 在执行擦除操作之后检测到未故障存储器单元的附加擦除操作，以及被配置为产生体电压的体电压发生器。