公开(公告)号：US20240395672A1

公开(公告)日：2024-11-28

申请号：US18792962

申请日：2024-08-02

Applicant: Name SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Shaofeng DING ,  Sungwook MOON ,  Jeonghoon AHN ,  Yunki CHOI

IPC: H01L23/48 ,  H01L23/522 ,  H01L25/065

Abstract: A semiconductor chip may include; a device layer including transistors on a substrate, a wiring layer on the device layer, a first through via passing through the device layer and the substrate, and a second through via passing through the wiring layer, the device layer and the substrate, wherein a first height of the first through via is less than a second height of the second through via.