公开(公告)号：US20170178680A1

公开(公告)日：2017-06-22

申请号：US14978729

申请日：2015-12-22

Applicant: NetApp, Inc.

Inventor： John William Haskins, JR. ,  David Anthony Slik ,  Keith Arnold Smith ,  Maxim Gerald Smith

IPC: G11B20/10 ,  G11B20/12 ,  G11B20/18 ,  G06F3/06

CPC classification number: G11B20/1217 ,  G06F3/0619 ,  G06F3/0644 ,  G06F3/065 ,  G06F3/0676 ,  G11B20/1889 ,  G11B2020/1893

Abstract: A method includes receiving a write request to write a current data block to a Shingled Magnetic Recording (SMR) storage device. In response, the current data block is written to a current physical block in an open zone of the SMR storage device. A corresponding copy of the current data block is written to a nonvolatile memory. A determination is made of whether a wandering write error occurred during the writing of the data to the open zone. In response to the wandering write error occurring, for each of the number of written physical blocks in the open zone that have the corresponding copy in the nonvolatile memory, the data in the physical block is validated using the corresponding copy. In response to validation, the data in the corresponding copy is written as corrected data for the physical block to a new zone in the SMR storage device.

公开(公告)号：US20190251996A1

公开(公告)日：2019-08-15

申请号：US16394212

申请日：2019-04-25

Applicant: NetApp, Inc.

Inventor： John William Haskins, JR. ,  David Anthony Slik ,  Keith Arnold Smith ,  Maxim Gerald Smith

IPC: G11B20/12 ,  G06F3/06 ,  G11B20/18

CPC classification number: G11B20/1217 ,  G06F3/0619 ,  G06F3/0644 ,  G06F3/065 ,  G06F3/0676 ,  G11B20/1889 ,  G11B2020/1893

Abstract: A method includes receiving a write request to write a current data block to a Shingled Magnetic Recording (SMR) storage device. In response, the current data block is written to a current physical block in an open zone of the SMR storage device. A corresponding copy of the current data block is written to a nonvolatile memory. A determination is made of whether a wandering write error occurred during the writing of the data to the open zone. In response to the wandering write error occurring, for each of the number of written physical blocks in the open zone that have the corresponding copy in the nonvolatile memory, the data in the physical block is validated using the corresponding copy. In response to validation, the data in the corresponding copy is written as corrected data for the physical block to a new zone in the SMR storage device.