公开(公告)号：US20220231473A1

公开(公告)日：2022-07-21

申请号：US17305310

申请日：2021-07-02

Applicant: Ningbo University

Inventor： Rongping Wang ,  Kunlun Yan ,  Zhen Yang

IPC: H01S3/063 ,  H01S3/16 ,  H01S3/17 ,  C03C17/02 ,  G03F7/00

Abstract: A manufacturing method of a channel type planar waveguide amplifier and a channel type planar waveguide amplifier. The method is to pattern the channel structures on the surface of the optical substrate, and then seal them together with rare earth doped chalcogenide glass into the quartz tube, and finally the channel-type waveguide structure is directly created via the melt-quenching method to achieve high quality planar waveguide amplifier. Excellent side wall roughness can be assured since the present invention does not have any direct etching of rare earth ions. Chemical composition and the activity of the rare earth ions can be maintained since the whole process is not involved in any decomposition of the glass into atoms, ions or clusters as that occurs during the fabrication process of the films deposited by the traditional methods like thermal evaporation and magnetron sputtering.