公开(公告)号：US06480990B1

公开(公告)日：2002-11-12

申请号：US09561725

申请日：2000-05-01

Applicant: Nolan David Sharp ,  Henry C. Yu

Inventor： Nolan David Sharp ,  Henry C. Yu

IPC: G06F1750

CPC classification number: G06F17/5045 ,  H01L27/0207 ,  H01L27/11807

Abstract: An application specific integrated circuit (ASIC) and method of manufacture. The ASIC includes a substrate layer, at least one metal layer and an operational block. The metal layer is formed above the substrate layer. The operational block is formed in the substrate layer and the metal layer, and is definable by a two-dimensional boundary. The operational block includes a plurality of operational logic gates, a first subgroup of spare logic gates, a second subgroup of spare logic gates, operational wiring and spare gate wiring. The operational logic gates, the first subgroup and the second subgroup are formed on the substrate layer, with the first subgroup being spaced from the second subgroup. The operational wiring is routed into the metal layer and interconnects the operational logic gates to configure the operational block to perform a desired operation. The spare gate wiring is similarly routed into the metal layer. The spare gate wiring is separate from the operational wiring, and connects at least one of the first subgroup logic gates to at least one of the second subgroup logic gates. In a preferred embodiment, a plurality of metal layers are provided, and a spacing between the subgroups dictates that the spare gate wiring, as formed by an automatic routing tool, extends to the outer metal layers where it is accessible by a focused ion beam device.

Abstract translation: 专用集成电路（ASIC）及其制造方法。 ASIC包括衬底层，至少一个金属层和操作块。 金属层形成在基底层的上方。 操作块形成在基板层和金属层中，并且可由二维边界限定。 操作块包括多个操作逻辑门，备用逻辑门的第一子组，备用逻辑门的第二子组，操作布线和备用栅极布线。 操作逻辑门，第一子组和第二子组形成在衬底层上，第一子组与第二子组间隔开。 操作布线被路由到金属层并且互连操作逻辑门以配置操作块以执行期望的操作。 备用栅极布线类似地布线到金属层中。 备用栅极布线与操作布线分开，并且将至少一个第一子组逻辑门连接到第二子组逻辑门中的至少一个。 在优选实施例中，提供多个金属层，并且子组之间的间隔决定了由自动布线工具形成的备用栅极布线延伸到外部金属层，其中聚焦离子束装置 。