公开(公告)号：US07994419B2

公开(公告)日：2011-08-09

申请号：US12167583

申请日：2008-07-03

申请人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum ,  Genevieve Martin

发明人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum ,  Genevieve Martin

IPC分类号： H01L31/0256

CPC分类号： H01L31/1852 ,  H01L31/06875 ,  Y02E10/544

摘要： The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

摘要翻译： 本发明利用外延剥离，其中在衬底和薄膜III-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑，在薄膜III-V复合太阳能电池从基板分离之前，将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离，牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离，则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。

公开(公告)号：US20090044860A1

公开(公告)日：2009-02-19

申请号：US12167583

申请日：2008-07-03

申请人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

发明人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

IPC分类号： H01L31/0256

CPC分类号： H01L31/1852 ,  H01L31/06875 ,  Y02E10/544

摘要： The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

摘要翻译： 本发明利用外延剥离，其中在衬底和薄膜III-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑，在薄膜III-V复合太阳能电池从基板分离之前，将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离，牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离，则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。

公开(公告)号：US10923617B2

公开(公告)日：2021-02-16

申请号：US13165318

申请日：2011-06-21

申请人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum ,  Genevieve Martin

发明人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum ,  Genevieve Martin

IPC分类号： H01L31/18 ,  H01L31/0687

摘要： The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

公开(公告)号：US20090038678A1

公开(公告)日：2009-02-12

申请号：US12167588

申请日：2008-07-03

申请人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

发明人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

IPC分类号： H01L31/078 ,  H01L31/042

CPC分类号： H01L31/1852 ,  H01L31/06875 ,  Y02E10/544

摘要： The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

摘要翻译： 本发明利用外延剥离，其中在衬底和薄膜III-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑，在薄膜III-V复合太阳能电池从基板分离之前，将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离，牺牲层作为外延剥离的一部分被去除。 一旦衬底与薄膜III-V复合太阳能电池分离，则可以将衬底重新用于形成另一薄膜III-V复合太阳能电池。