Semiconductor device and method for manufacturing the same
    7.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07253038B2

    公开(公告)日:2007-08-07

    申请号:US11455950

    申请日:2006-06-20

    IPC分类号: H01L21/60

    摘要: It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.

    摘要翻译: 通过减少数量的处理,与用于高清晰度显示的高开放率的可靠的有源矩阵液晶显示装置相比,实现了一个问题。 本发明的特征在于:在相同的工艺中形成栅电极和源漏互连,形成覆盖互连的第一绝缘膜,在第一绝缘膜上形成上光屏蔽膜,在第一绝缘膜上形成第二绝缘膜 上部遮光膜,部分地蚀刻第一和第二绝缘膜以形成到达漏极互连的接触孔,并且在第二绝缘膜上形成像素电极以连接到漏极互连。 同时,由上部遮光膜,第二绝缘膜和像素电极形成保持电容。

    Semiconductor device and method for manufacturing the same

    公开(公告)号:US20060255354A1

    公开(公告)日:2006-11-16

    申请号:US11455950

    申请日:2006-06-20

    IPC分类号: H01L33/00

    摘要: It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.

    Semiconductor device and method for manufacturing the same
    9.
    发明申请
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US20050101066A1

    公开(公告)日:2005-05-12

    申请号:US10996228

    申请日:2004-11-23

    摘要: It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.

    摘要翻译: 通过减少数量的处理,与用于高清晰度显示的高开放率的可靠的有源矩阵液晶显示装置相比,实现了一个问题。 本发明的特征在于:在相同的工艺中形成栅电极和源漏互连,形成覆盖互连的第一绝缘膜,在第一绝缘膜上形成上光屏蔽膜,在第一绝缘膜上形成第二绝缘膜 上部遮光膜,部分地蚀刻第一和第二绝缘膜以形成到达漏极互连的接触孔,并且在第二绝缘膜上形成像素电极以连接到漏极互连。 同时,由上部遮光膜,第二绝缘膜和像素电极形成保持电容。

    Semiconductor device and method for manufacturing the same
    10.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US06828584B2

    公开(公告)日:2004-12-07

    申请号:US10151005

    申请日:2002-05-17

    IPC分类号: H01L2904

    摘要: It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.

    摘要翻译: 通过减少数量的处理,与用于高清晰度显示的高开放率的可靠的有源矩阵液晶显示装置相比,实现了一个问题。 本发明的特征在于:在相同的工艺中形成栅电极和源漏互连,形成覆盖互连的第一绝缘膜,在第一绝缘膜上形成上光屏蔽膜,在第一绝缘膜上形成第二绝缘膜 上部遮光膜,部分地蚀刻第一和第二绝缘膜以形成到达漏极互连的接触孔,并且在第二绝缘膜上形成像素电极以连接到漏极互连。 同时,由上部遮光膜,第二绝缘膜和像素电极形成保持电容。