专利检索 ap:("Northeastern University") AND inv:"Zachariah Boston HENNIGHAUSEN" 第 1 页

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发明申请
Two Dimensional Materials for Use in Ultra High Density Information Storage and Sensor Devices 有权

公开(公告)号：US20220085287A1

公开(公告)日：2022-03-17

申请号：US17416094

申请日：2019-12-18

申请人： Northeastern University

发明人： Zachariah Boston HENNIGHAUSEN , Swastik KAR

IPC分类号： H01L45/00 , C09K11/88 , G11C13/04

摘要： 2D heterostructures comprising Bi2Se3/MoS2, Bi2Se3/MoSe2, Bi2Se3/WS2, Bi2Se3/MoSe2. 2xS2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.