公开(公告)号：US20200235293A1

公开(公告)日：2020-07-23

申请号：US16254218

申请日：2019-01-22

Applicant: Northrop Grumman Systems Corporation

Inventor： Vincent Gambin ,  Rachel A. Koltun ,  Benjamin Heying

IPC: H01L45/00

Abstract: An exemplary semiconductor incorporates phase change material MoxW1-xTe2 that may be the semiconducting channel or may be part of a control terminal/gate of the semiconductor. The phase change material selectably being in one of metal and insulator phases depending on whether a voltage field greater than a predetermined phase change field is present at the phase change material. The properties of the semiconductor are varied depending on the phase of the phase change material.

公开(公告)号：US11018296B1

公开(公告)日：2021-05-25

申请号：US17012400

申请日：2020-09-04

Applicant: Northrop Grumman Systems Corporation

Inventor： Vincent Gambin ,  Rachel A. Koltun ,  Benjamin Heying

IPC: H01L45/00

Abstract: An exemplary semiconductor incorporates phase change material MoxW1-xTe2 that may be the semiconducting channel or may be part of a control terminal/gate of the semiconductor. The phase change material selectably being in one of metal and insulator phases depending on whether a voltage field greater than a predetermined phase change field is present at the phase change material. The properties of the semiconductor are varied depending on the phase of the phase change material.

公开(公告)号：US10811601B2

公开(公告)日：2020-10-20

申请号：US16254218

申请日：2019-01-22

Applicant: Northrop Grumman Systems Corporation

Inventor： Vincent Gambin ,  Rachel A. Koltun ,  Benjamin Heying

IPC: H01L45/00

Abstract: An exemplary semiconductor incorporates phase change material MoxW1-xTe2 that may be the semiconducting channel or may be part of a control terminal/gate of the semiconductor. The phase change material selectably being in one of metal and insulator phases depending on whether a voltage field greater than a predetermined phase change field is present at the phase change material. The properties of the semiconductor are varied depending on the phase of the phase change material.