Abstract:
An ultrasound transducer element including a cell group constituted by a plurality of ultrasound transducer cells, wherein each of the plurality of ultrasound transducer cells includes a lower electrode arranged on a substrate, a membrane including an upper electrode arranged facing the lower electrode with a cavity positioned therebetween, and a plurality of pillars forming the cavity by supporting the membrane, and each cavity mutually communicates with one another.
Abstract:
An ultrasound unit includes an ultrasound array that has a plurality of ultrasound elements, each of which has a first principal surface that is rectangular where a transmitting and receiving portion, a signal electrode terminal, and a ground electrode terminal are arranged in a longer side direction, longer sides of the ultrasound elements being coupled, one or more short-lines that are connected to a plurality of ground electrode terminals, a ground line that is connected to the short-line, and a plurality of signal lines, each of which is connected to one of the signal electrode terminals, and adjoining ultrasound elements of the ultrasound elements are coupled such that the signal electrode terminals are arranged alternately on opposite sides in the longer side direction of the transmitting and receiving portions that are rectangular.
Abstract:
An ultrasound transducer element includes a plurality of electrostatic capacitance type ultrasound cells each having a lower electrode portion and a membrane including an upper electrode portion that are oriented and disposed via a cavity circular in plan view, and a thickness of the cavity monotonously decreases in a curved manner toward an outer circumferential portion from a center portion of the cavity.
Abstract:
An ultrasound element includes a silicon substrate, a lower electrode layer that has a plurality of lower electrode sections, and a plurality of lower wiring sections, and is connected to a lower electrode terminal to which a drive signal and a bias signal are applied, a lower insulating layer, an upper insulating layer in which a plurality of cavities smaller than the respective lower electrode sections are formed, an upper electrode layer that has a plurality of upper electrode sections that are disposed to face the respective lower electrode sections via the respective cavities, and are smaller than the lower electrode sections and larger than the cavities, and a plurality of upper wiring sections, and is connected to an upper electrode terminal at a ground potential that detects a capacitance signal, and a protection layer.
Abstract:
A US element includes a silicon substrate, wherein a lower electrode layer that has a plurality of lower electrode sections, and a plurality of lower wiring sections, and is connected to a lower electrode terminal to which a drive signal and a bias signal are applied, a lower insulating layer, an upper insulating layer in which a plurality of cavities are formed, an upper electrode layer that has a plurality of upper electrode sections and a plurality of upper wiring sections, and is connected to an upper electrode terminal at a ground potential for detecting a capacitance signal, and a protection layer are sequentially stacked on the silicon substrate, and the US element further includes a shield electrode section that is formed at least at an upper side of the lower wiring sections, and is connected to a shield electrode terminal at a ground potential.
Abstract:
An ultrasonic element includes at least one cMUT provided to a substrate, wherein the cMUT includes a first electrode provided to the substrate, a frame member having a cavity, a second electrode disposed to face the first electrode with the cavity interposed between the second electrode and the first electrode, and a protective layer covering the second electrode, a length of the cavity in an X axis direction being longer than a width of the cavity in a Y axis direction, the protective layer having a convex region extending in the X axis direction, a width of the convex region in the Y axis direction varying.
Abstract:
An ultrasound unit includes: ultrasound elements each including a plurality of ultrasound cells formed on a substrate including a semiconductor, the plurality of ultrasound cells each including an upper electrode having a ground potential and a lower electrode to which a drive signal is applied, the upper electrode and the lower electrode being arranged facing each other via a cavity and thereby forming a first capacitor; a package member in which the plurality of ultrasound elements are disposed, the package member having a ground potential; and an insulation member disposed between the package member and each of the ultrasound elements. A second capacitor is formed as a result of the insulation member serving as a gap, and a capacity of a third capacitor serially connected to the second capacitor is smaller than a capacity of the second capacitor.
Abstract:
An ultrasound transducer array according to an embodiment includes a substrate, a plurality of groove-like recesses arranged at a predetermined interval on one surface of the substrate, a cell region arranged between the recesses on the one surface side of the substrate, a flexible film configured to cover the substrate and the cell region and having fragility lower than fragility of the substrate, and a dividing groove having a width smaller than a width of the recess and reaching from the other surface of the substrate to the flexible film in the recess.