公开(公告)号：US20220077368A1

公开(公告)日：2022-03-10

申请号：US17428988

申请日：2020-02-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Franz EBERHARD

IPC: H01L33/62 ,  H01L33/00

Abstract: An optoelectronic semiconductor device may include a first and second semiconductor layer having a first and second conductivity type, respectively, a first contact structure, a contact layer, and a separating layer. Contact holes are arranged in the separating layer. The optoelectronic semiconductor device may include portions of a conductive layer arranged over a side of the separating layer facing away from the contact layer. The portions of the conductive layer are each connected to a conducting material in the contact holes. The first contact structure is connected to the contact layer via the portions of the conductive layer and the conducting material. A length of each of the portions is greater than a greatest width of the portions. The length denotes a shortest distance between an associated contact hole and a conductive material between adjacent portions, and the width is measured perpendicular to the length.

公开(公告)号：US20220085263A1

公开(公告)日：2022-03-17

申请号：US17422207

申请日：2020-01-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Franz EBERHARD

IPC: H01L33/62 ,  H01L33/44 ,  H01L33/42

Abstract: An optoelectronic semiconductor device may include a first semiconductor layer and a second semiconductor layer, the first and second semiconductor layers being stacked one above the other. The device may include a first contact structure and a contact layer. The device may include a separating layer arranged over a side of the contact layer, and a current spreading layer arranged over a side of the separating layer facing away from the contact layer. The first contact structure may be connected to the contact layer via the current spreading layer and the separating layer. A layer stack may include the contact layer, the separating layer, and the current spreading layer has an anisotropic conductivity. The separating layer is present as a continuous layer in a region between the contact layer and the current spreading layer.

公开(公告)号：US20220123172A1

公开(公告)日：2022-04-21

申请号：US17427921

申请日：2020-02-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Franz EBERHARD

IPC: H01L33/14 ,  H01L33/38

Abstract: An optoelectronic semiconductor device may include a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The first and second semiconductor layers may be part of a semiconductor layer stack. The optoelectronic semiconductor device may include an electrically conductive layer arranged over a surface of the first semiconductor layer facing away from the second semiconductor layer. The electrically conductive layer may be directly adjacent to first regions of the first semiconductor layer. The electrically conductive layer may be removed from second regions of the first semiconductor layer, or a dielectric material may be arranged between second regions of the first semiconductor layer and the current spreading layer. The smallest horizontal dimension of the second regions may be less than 2 μm.