公开(公告)号：US20210399529A1

公开(公告)日：2021-12-23

申请号：US17291541

申请日：2019-11-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jörg Erich SORG ,  Jan MARFELD ,  Stefan MORGOTT

IPC: H01S5/40 ,  H01S5/026 ,  H01S5/028

Abstract: A semiconductor laser includes an edge-emitting laser diode, which has an active zone for generating laser radiation and a facet having a radiation exit region, and at least one photodiode. The facet is arranged on a main emission side of the laser diode. The photodiode is arranged in such a way that at least part of the laser radiation exiting at the facet reaches the photodiode. The laser diode and the photodiode are not connected to each other in a non-destructively detachable manner, and a non-destructively detachable connection is formed with a joining partner