公开(公告)号：US10418091B2

公开(公告)日：2019-09-17

申请号：US14518670

申请日：2014-10-20

申请人： OVONYX MEMORY TECHNOLOGY, LLC

发明人： Serguei Okhonin ,  Mikhail Nagoga

IPC分类号： G11C11/34 ,  G11C11/409 ,  G11C11/404 ,  G11C11/4076 ,  H01L27/108 ,  H01L29/78 ,  G11C11/4067 ,  H01L27/12

摘要： Techniques are disclosed for writing, programming, holding, maintaining, sampling, sensing, reading and/or determining a data state of a memory cell of a memory cell array, such as a memory cell array having a plurality of memory cells each comprising an electrically floating body transistor. In one aspect, the techniques are directed to controlling and/or operating a semiconductor memory cell having an electrically floating body transistor in which an electrical charge is stored in the body region of the electrically floating body transistor. The techniques may employ bipolar transistor currents to control, write and/or read a data state in such a memory cell. In this regard, the techniques may employ a bipolar transistor current to control, write and/or read a data state in/of the electrically floating body transistor of the memory cell.

公开(公告)号：US11031069B2

公开(公告)日：2021-06-08

申请号：US16570634

申请日：2019-09-13

申请人： Ovonyx Memory Technology, LLC

发明人： Serguei Okhonin ,  Mikhail Nagoga

IPC分类号： G11C11/34 ,  G11C11/409 ,  G11C11/404 ,  G11C11/4076 ,  H01L27/108 ,  H01L29/78 ,  G11C11/4067 ,  H01L27/12

摘要： Techniques are disclosed for writing, programming, holding, maintaining, sampling, sensing, reading and/or determining a data state of a memory cell of a memory cell array, such as a memory cell array having a plurality of memory cells each comprising an electrically floating body transistor. In one aspect, the techniques are directed to controlling and/or operating a semiconductor memory cell having an electrically floating body transistor in which an electrical charge is stored in the body region of the electrically floating body transistor. The techniques may employ bipolar transistor currents to control, write and/or read a data state in such a memory cell. In this regard, the techniques may employ a bipolar transistor current to control, write and/or read a data state in/of the electrically floating body transistor of the memory cell.